Estimate temperature, stress, and reliability for your die attach in 30 seconds

Compare AlN vs SiC submounts for edge-emitter packaging. Get pass/fail guidance, a generated part number, spec sheet PDF, and a path to samples or custom quote.

Scenario

Application

Edge-emitter attach — compare AlN vs SiC submount

Default stack: Die → AuSn → Submount → Cu

Total thermal load (W)Peak waste heat at operating point — adjust for your CW or pulsed peak

Laser diode material

915 nm bars — paper-validated SiC vs AlN COS reference

Laser chip

Chip width (mm)Chip length (mm)Chip thickness (mm)Active area width (µm)Lasing stripe — all thermal load originates hereActive layer thickness (µm)QW / ridge heat generation depth (~2 µm typical)

Bonding direction

Active ridge toward AuSn — shorter thermal path, typical for high-power attach

Submount auto-sized ≈3× die (1.5×3 mm). Ridge along chip length · AR facet at submount front edge.

Submount stack

Top AuSn (µm)Top Cu (µm)

Bottom side (COS → header)

Bottom Cu (µm)Bottom AuSn (µm)

Case temp (°C)Cycling profile

Indicative estimate only — not engineering sign-off, warranty, or guarantee of reliability.

Live stack preview

Geometry updates as you edit — run simulation for thermal & stress analysis.

Stack cross-section

Cut through ridge center · 200 µm stripe · Ridge ↓ solder

Die → AuSn → Submount → header · 20 µm active · bottom: cu ausn

3D view

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Submount: 1.5×3×0.25 mm
AuSn pad: 0.24×1.05 mm · 25 µm pullback
Bonding: Ridge down (junction-down)
Thermal load: 3.00 W peak
Case temp: 25 °C

AlN vs SiC thermal & fatigue comparison
Safe envelope & dominant failure mode
FerraLink part number + spec sheet PDF