
Single-crystal SiC submount — laser diode
350–400 W/m·K spreading for edge emitters, bars, and pulsed lidar where junction temperature margin is tight.
Typical use & selection notes
Typical use: 905 nm pulsed lidar, high-power edge emitters, and GaN-assisted pump lasers needing maximum die-level conductivity.
Why this line: Single-crystal SiC minimizes spreading resistance when footprint is small and peak power is high — pair with Ti/Pt/Au or Au/Sn metallization for your attach flow.

