Spreaders and substrates for GaN/SiC power and RF — AlN with thick copper or DPC, WCu slugs for CTE match, and machined heat sinks for TEC-cooled modules.
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Share die size, current per finger, and package floor material. DPC on AlN suits many GaN PAs; WCu bridges to Kovar when CTE match is critical. For TEC modules, specify cold-side flatness and bolt pattern.
3 product lines in catalog
Direct plated copper (DPC) or thick Cu builds on AlN for GaN/SiC RF and power stages.
Typical use: GaN PA modules, wide-bandgap inverters, and high current-density dies needing low Rθ from junction to flange.
Why this line: Copper thickness and trace width set current capacity — DPC on AlN is the usual path when alumina is too resistive.
Tungsten-copper composite for matched CTE to GaAs/Si and high thermal conductivity in RF housings.
Typical use: RF MMIC packages, high-power amplifiers, and flanges where CuW bridges die CTE to Kovar or CuW carriers.
Why this line: WCu density and composition tune CTE — specify your package floor material when quoting.
Machined or plated spreader that interfaces TEC cold side to package floor or submount pedestal.
Typical use: Cooled laser modules, butterfly TEC pockets, and sensors that need a defined thermal path through the cooler.
Why this line: Flatness and nickel-gold finish drive TEC attach yield — share TEC footprint and bolt torque spec.
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